To solve a problem of shortening time for property search and property optimization of an oxide electronics that general synthesizing of materials including a thin film is bad in experimental reproducibility, therefore the general synthesizing requires time to repeat the same experiments and to optimize properties.

In a search method for the properties by ion implantation, ions are injected into the thin film synthesized on a substrate with a mask system in the lengthways direction and simultaneously with a beam scanning velocity variable system in the sideways direction. The thin film is heat-treated to recover the crystallinity after the ion implantation, and to contain an injected element in lattice positions.