PURPOSE: To form a good interface between the light emitting end surface of a semiconductor laser part and a II-VI compound semiconductor part and to obtain a high-efficiency second harmonic having little optical crystal loss by a method wherein the II-VI compound semiconductor part is grown in the lateral direction on the light emitting edge face of the semiconductor layer part formed on a III-V compound semiconductor substrate.

CONSTITUTION: An SiO2 film 101 is formed on a face (111) B N-type GaAs substrate 101. After a semiconductor laser part is formed on the substrate 101, a II-VI compound semiconductor part 108 is grown on faces 110, side faces of a semiconductor laser part, which are light emitting face of the semiconductor laser part, in the lateral direction by an MOVPE method. At this time, as conditions of the growth of the semiconductor part 108, ZnSSe formed using dimethylzinc. H2Se and H2S as its raw materials is supplied as a II-VI compound semiconductor held at a low temperature and under a low pressure so that a growth does not occur on the face (111). The generation of a high-optical coupling efficiency and high-efficiency second harmonic becomes possible.