SEGMENT PILLAR LAYOUT FOR HIGH-VOLTAGE VERTICAL TRANSISTOR

Japanese Patent JP2008205461

A

To provide processes for manufacturing a semiconductor device structure and a high-voltage transistor.

As one embodiment, a transistor manufactured on a semiconductor die includes a first section of a transistor segment arranged in a first area of the semiconductor die, and a second section of a transistor segment arranged in a second area adjacent to the first area of the semiconductor die. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material extending in a vertical direction. First and second dielectric regions are arranged at both sides of the pillar. First and second field plates are arranged in the first and second dielectric regions, respectively. Outer field plates of transistor segments adjacent to first and second sections are separated or partially merged. This summary is offered to searchers or other viewers as to be able to quickly search for the invention concerned.

PARTHASARATHY VIJAY
GRABOWSKI WAYNE BRYAN

JP2008029919A

September 04, 2008

February 12, 2008

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POWER INTEGRATIONS INC

H01L29/06; H01L21/76; H01L29/78

JP2004087520A	2004-03-18
JP2006351930A	2006-12-28
JP2007207862A	2007-08-16
JP2001053275A	2001-02-23
JP2006216927A	2006-08-17
JPH11233765A	1999-08-27
JP2006351930A	2006-12-28
JP2004200540A	2004-07-15
JP2001168329A	2001-06-22
JPS59155144A	1984-09-04
JP2008004772A	2008-01-10

Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda

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