Title:
埋め込みトランジスタを有するセグメント型ＬＥＤ
Document Type and Number:
Japanese Patent JP7138711
Kind Code:
B2
Abstract:
A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.
Inventors:
Tandon, Ashish
Gordon, Luke
Shen, Yu-Chen
Gordon, Luke
Shen, Yu-Chen
Application Number:
JP2020534488A
Publication Date:
September 16, 2022
Filing Date:
December 20, 2018
Export Citation:
Assignee:
Lumileds Limited Liability Company
International Classes:
H01L33/02; F21S2/00; F21V9/30; H01L29/12; H01L29/78; H01L33/48
Domestic Patent References:
| JP2010114112A | ||||
| JP5315645A | ||||
| JP63120487A | ||||
| JP2018538554A | ||||
| JP2016502123A | ||||
| JP2011211189A |
Foreign References:
| US20140306244 | ||||
| US20170069609 | ||||
| WO2017089676A1 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Osamu Miyazaki
Tadahiko Ito
Osamu Miyazaki