To provide a method to accurately and conveniently select members of a reaction vessel, a stirring blade, a seed crystal holding rod, a seed crystal holding table, a baffle, a gas introduction pipe, a valve or the like that can be used for manufacturing a periodic table group 13 metal nitride semiconductor crystal, and to provide a manufacturing method of the periodic table group 13 metal nitride semiconductor crystal in which an adverse effect is not caused by the change in quality and/or the deterioration of the members.
The volume and/or the size of the member is measured, the volume change and/or the dimensional change from the unused state is made an indicator, and the member used for the manufacturing of the periodic table group 13 metal nitride semiconductor crystal is selected, thereby the member not to affect the crystal growth negatively can be selected accurately and simply. The influence that incorporates hydrogen is large for the expansion of the member, thereby the selection method of the member is especially suitable for the manufacturing method in which the component including a hydrogen element exists in a reaction system.
ITO SUMITAKA
KUBOTA KOHEI
SAITO TAKEYA
Hidemi Matsukura
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Kaoru Kosaka
Toshiaki Shimoda