PURPOSE: To make it easy to remove the residue of a resist and to form a metal film of a prescribed shape on a semiconductor, by conducting the resist burn-off in an inert gas contg. a limited amount of O2, then by removing the residue in oxygen plasma.
CONSTITUTION: A photoresist pattern is formed on a semiconductor, in addn., the semiconductor is coated with a film of metal such as Al by evaporation metallization etc. The semiconductor is then heated in an inert gas such as nitrogen contg. 0.05W5% oxygen to vaporize the photoresist and to remove the metal film on the photoresist film. Seccessively, the semoconductor is exposed to the oxygen plasma to eliminate the residue as carbon dioxide. This method makes it possible to remove easily photoresist, and a metal film is selectively adhered on the semiconductor.
TSURUOKA MASAO
YAGI HIDEYUKI
HITACHI HARAMACHI DENSHI KOGYO