Title:
Selective film formation for convex and concave features using deposition and etching processes
Document Type and Number:
Japanese Patent JP6337165
Kind Code:
B2
Abstract:
Embodiments of the invention provide a processing method for selective film formation for raised and recessed features using deposition and etching processes. According to one embodiment, the method includes providing a substrate having a recessed feature with a sidewall and a bottom portion, and depositing a film in the recessed feature and on a field area around the opening of the recessed feature, where the film is non-conformally deposited with a greater film thickness on the bottom portion than on the sidewall and the field area. The method further includes etching the film in an atomic layer etching (ALE) process in the absence of a plasma, where the etching thins the film on the bottom portion and removes the film from the sidewall and the field area, and repeating the depositing and the etching at least once to increase the film thickness of on the bottom portion.
Inventors:
Kandabara N. Tapilly
Application Number:
JP2017017740A
Publication Date:
June 06, 2018
Filing Date:
February 02, 2017
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/316; C23C16/04; C23C16/24; C23C16/40; C23C16/56; H01L21/28; H01L21/285; H01L21/31; H01L21/3205; H01L21/768
Domestic Patent References:
| JP2009539266A | ||||
| JP2012199306A | ||||
| JP2008198996A | ||||
| JP2009531535A | ||||
| JP2012209394A |
Foreign References:
| US20150380281 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki
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