To provide a technology that obtains a gate (i.e., the gate formed by a metal silicide) whose entire portion is silicided if a substrate is comprised of silicon.
A region 16 formed by a compound comprising a metal material and semiconductor material is selectively formed into the substrate 1 comprised of the semiconductor material by preliminarily forming not only a germanium oxide layer with a thickness of 3 to 5 nm over a predetermined part of the substrate surface but also a silicon oxide layer 12 on the rest of a surface 1a. A metallic material layer 14 is deposited on the oxide layer. The metal material is selected so that the oxide is thermodynamically made more stable than the germanium oxide and less stable than the silicon oxide. The compound is then formed at a height of the part of the surface 1a of the substrate 1 after reduction of the germanium oxide is carried out by the metal material through thermal annealing thereof. After the foregoing process, the metallic material layer 14 is removed.
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Takahashi
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