PURPOSE: To improve the accuracy of the formation of a layer by using a gas, which does not precipitate Si nuclei on SiO2, as a reaction gas containing Si and selectively growing WSix only onto Si while employing SiO2 as a mask when a tungsten silicide (WSix) is grown selectively only onto Si in a substrate constituted of silicon (Si) and silicon dioxide (SiO2).
CONSTITUTION: A mask pattern composed of silicon dioxide (SiO2) is formed onto silicon (Si), and a tungsten silicide (WSix) is grown only onto silicon by using tungsten hexafluoride (WF6) and a gas, which contains silicon and does not precipitate silicon onto silicon dioxide during a reaction, as a reaction gas. The use of tetrachlorosilane (SiCl4), trichlorosilane (SiHCl3) or dichlorosilane (SiH2Cl2)+hydrochloric acid (HCl) as the reaction gas containing silicon is effective. Accordingly, the tungsten silicide can be grown thick selec tively as a conductive layer into a contact hole, thus flattening a substrate, then acquiring a high integrated process.
MIENO FUMITAKE
TOKI MASAHIKO
ITO KIKUO
TAKEDA MASAYUKI
| JPS5972132A | 1984-04-24 |