Title:
選択的領域気相アルミナイズ方法
Document Type and Number:
Japanese Patent JP4907072
Kind Code:
B2
Abstract:
The present invention is process for forming diffusion aluminide coatings on an uncoated surface (36,38) of a substrate (42), without interdiffusing a sufficient amount of aluminum into a coating layer (44) to adversely affect the coating (44) growth potential and mechanical properties of said coating layer (44). A metal substrate (42) is provided comprising an external surface (36,38) and an internal passage (34) therein defined by an internal surface (36), at least a portion of the external surface (38) of the substrate (42) being coated with a coating layer (44) selected from the group consisting of beta -NiAl-base, MCrAlX, a line-of-sight diffusion aluminide, a non-line-of-sight diffusion aluminide, a pack diffusion aluminide, and a slurry diffusion aluminide on said substrate (42). The external surface (38) of the substrate (42) is cleaned. The metal substrate (42) is subjected to a aluminum vapor phase deposition process performed using a fluorine-containing activator selected from the group consisting of AlF3, CrF3, NH4F, and combinations thereof, at a rate in the range of about 1.27 mols of fluorine per m<3>/h (0.036 mols of fluorine per ft<3>/h) of transport gas to about 6.36 mols of fluorine per m<3>/h (0.18 mols of fluorine per ft<3>/h) of transport gas, at a temperature in the range of about 1350 DEG F (730 DEG C) to about 1925 DEG F (1050 DEG C), using a transport gas selected from the group consisting of argon, nitrogen, hydrogen, and combinations thereof, the transport gas being provided at a flow rate in the range of about 0.57 m<3>/h to about 3.4 m<3>/h (about 20 ft<3>/h to about 120 ft<3>/h) for a period of time in the range of about 2 hours to about 10 hours. The substrate (42) is then cooled. A superalloy article (20) coated with a diffusion aluminide layer (40) is obtained by using the diffusion aluminide coating process of the present invention.
Inventors:
Nripendra Eggplant Das
Joseph David Ligne
Jeffrey Alan Faentner
Matthew David Sailor
Joseph David Ligne
Jeffrey Alan Faentner
Matthew David Sailor
Application Number:
JP2004299484A
Publication Date:
March 28, 2012
Filing Date:
October 14, 2004
Export Citation:
Assignee:
GENERAL ELECTRIC COMPANY
International Classes:
C23C16/08; F01D5/28; C23C10/02; C23C10/06; C23C10/14; F02C7/00
Domestic Patent References:
| JP59083757A | ||||
| JP2001064763A | ||||
| JP200341360A | ||||
| JP2003183809A |
Attorney, Agent or Firm:
Arakawa Satoshi
Hirokazu Ogura
Nobukazu Ito
Toshihisa Kurokawa
Hirokazu Ogura
Nobukazu Ito
Toshihisa Kurokawa