Title:
SELF-ALIGNED SILICIDE BASE BIPOLAR TRANSISTOR; RESISTANCE; THEIR MANUFACTURE
Document Type and Number:
Japanese Patent JPH04226038
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device containing a bipolar transistor and a resistance, and a method for manufacturing it using the same polysilicon layer. CONSTITUTION: A semiconductor device containing a bipolar transistor 2 and a resistance 3 is provided. In a method for manufacturing the semiconductor device, high temperature oxide(HTO) is used to form sidewall spacers 44 and 45 facing transistor contacts 20 and 26, respectively, and/or the spacers are formed on the upper side of a resistance part of the device. A sticking-formation for the HTO is performed at the same time with driving-in for a dopant, so that the number of steps in the method is reduced. This method is consistent with a MOB technique, thereby the bipolar transistor and the resistance, together with a MOS device, can be formed on the same substrate.
Inventors:
BANCHIYAADO DERONGU
KURISUTOFUAA SUKOTSUTO BUREIAA
JIYOOJI GANSUCHIYOO
TOOMASU SUKOTSUTO KURABU
KURISUTOFUAA SUKOTSUTO BUREIAA
JIYOOJI GANSUCHIYOO
TOOMASU SUKOTSUTO KURABU
Application Number:
JP14427691A
Publication Date:
August 14, 1992
Filing Date:
April 02, 1991
Export Citation:
Assignee:
NAT SEMICONDUCTOR CORP
International Classes:
H01L27/04; H01L21/331; H01L21/822; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; H01L27/04; H01L29/73
Attorney, Agent or Firm:
Kazuo Kobashi (1 person outside)
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