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Title:
SELF-LIGHT-EMITTING ELEMENT, SELF-LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, SELF-LIGHT-EMITTING ELEMENT DRIVING METHOD, AND MANUFACTURING METHOD FOR SELF-LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2010272257
Kind Code:
A
Abstract:

To provide a new light-emitting element capable of being made of an inexpensive silicon material in a simple manufacturing method and performing efficient light emission, and its manufacturing method.

The self-light-emitting element 1 has an electrode substrate 2, a thin-film electrode 3, and an electron acceleration layer 4 sandwiched between the electrode substrate 2 and the thin-film electrode 3 and including silicon fine particles 5 and at least either conductive fine particles 6 or basic dispersants 60. The self-light-emitting element 1 creates hot electron by accelerating electron in the electron acceleration layer 4 when voltage is impressed between the electrode substrate 2 and the thin-film electrode 3, and surfaces of the silicon fine particles 5 in the electron acceleration layer 4 are excited by the hot electron to emit light.


Inventors:
HIRAKAWA HIROYUKI
IMURA YASURO
NAGAOKA AYAE
IWAMATSU TADASHI
Application Number:
JP2009121457A
Publication Date:
December 02, 2010
Filing Date:
May 19, 2009
Export Citation:
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Assignee:
SHARP KK
International Classes:
H05B33/14
Domestic Patent References:
JPH11251069A1999-09-17
JP2003173878A2003-06-20
JP2002208346A2002-07-26
Foreign References:
WO2005004548A12005-01-13
WO2005004545A12005-01-13
Attorney, Agent or Firm:
Kenzo Hara International Patent Office



 
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