To provide a semiconductive seamless belt capable of reducing the elastic modulus of compression in the thickness direction, sufficiently obtaining nip width for transfer and reducing the extension deformation due to tensile stress in the driven state of the belt and a method of manufacturing the semiconductivity seamless belt.
The semiconductive seamless belt has a laminated structure having a foaming elastic body layer on the outer surface side of a basic material made of thermoplastic resin, the Young's modulus of the base material is ≥ 100MPa and the foaming elastic layer is a foaming elastic body obtained by dispersing hollow spherical particles into the elastic body or a foaming body foaming by mixing a foaming agent with the elastic body. The belt manufacturing method has a base material supply process for fitting the base material to the outer periphery of a mandrel and supplying the base material to a head by using an extruder to which a head provided with a mandrel supply part, an elastic body component supply part and a die part is fitted and an elastic body layer lamination process for forming an elastic body component layer on the outer periphery of the base material and forming a laminated structure having an elastic body layer on the outer surface side of the resin-made base material of high rigidity.
Koichi Kajisaki
Yuzo Ozaki
Toshihiko Taniguchi