Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR AMPLIFIER FOR ELECTRON BOMBARDMENT
Document Type and Number:
Japanese Patent JPS57132637
Kind Code:
A
Abstract:

PURPOSE: To improve the linearity of input and output characteristecs and productivity by forming the shape of electron beam spots into a rectangle, while keeping the electrostatic lens of an electron gun in the axially symmetrical structure.

CONSTITUTION: An electrostatic lens 6 consists of a Wehnelt cathode 9, an electrode 10, and anodes 11 to 13 and forms the axially symmetrical structure. The shape of the electron emissive area in the cathode 9 forms a rectangle. A rectangular picture of the electron emissive area can be focussed on a semiconductor detector 3 by applying a voltage to the anode 11 so that required electron current can be led by such structure, applying the beam acceleration voltage to the anode 13, and adjusting the voltage which is applied to the anode 12.


Inventors:
MITA OSAHISA
Application Number:
JP1809781A
Publication Date:
August 17, 1982
Filing Date:
February 12, 1981
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01J25/00; H01J25/50; H01L31/10; (IPC1-7): H01J25/50; H01L31/10