Title:
SEMICONDUCTOR AMPLIFIER
Document Type and Number:
Japanese Patent JP3174248
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor amplifier having the flat frequency characteristic of an amplification factor in a high frequency area and prevented from being fallen into an oscillation state.
SOLUTION: A signal Vin inputted to an input terminal 14 is amplified around signal ground potential Vsg and outputted as a signal Vout from an output terminal. An amplification factor is determined by the resistance values of 1st and 2nd resistors 12, 13. The 2nd resistor 13 is formed on a semiconductor substrate 16 through an insulating film and an electrode 1 connected to an output terminal 15 is arranged on the 2nd resistor 13 through an insulating film. The influence of distribution capacitance generated between the substrate 16 and the resistor 13 exerted upon the frequency characteristic of the amplitification factor can be suppressed by distribution capacitance generated between the electrode 1 and the 2nd resistor 13.
Inventors:
Junji Nakatsuka
Application Number:
JP21444195A
Publication Date:
June 11, 2001
Filing Date:
August 23, 1995
Export Citation:
Assignee:
Matsushita Electronics Industrial Co., Ltd.
International Classes:
H01L27/04; H01L21/822; H03F1/34; H03F3/189; H03F3/195; (IPC1-7): H03F3/195; H01L21/822; H01L27/04; H03F1/34
Domestic Patent References:
| JP58155750A | ||||
| JP62159010U |
Attorney, Agent or Firm:
Hiroshi Maeda (2 outside)