PURPOSE: To enable noises to be eliminated near the semiconductor chip as a noise source and to realize an inexpensive semiconductor chip carrier packaged in a high density, by integrally forming a bypassing capacitor within the semiconductor chip carrier.

CONSTITUTION: A chip carrier 1 consists of a cavity 31 for supporting semiconductor integrated circuit chips and of ceramic sheets 11, 12, 13 and 14. The ceramic sheet 11 is provided with I/O terminals 21, side conductors 22 and an electrode 23 of a capacitor. The electrode 23 is connected to ground terminals 21' and to bonding electrodes 28' to be connected to the ground of the chip. The ceramic sheet 12 is provided with the other electrode 25 of the capacitor and with side conductors 24, and the electrode 25 is connected to source terminals 21" and to bonding electrodes 28" for connecting the chip to the power supply. The electrodes 23 and 25 form a capacitor through the ceramic sheet 12 so as to bypass noises of the power source and of the ground.