Title:
SEMICONDUCTOR CIRCUIT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3431681
Kind Code:
B2
Abstract:
PURPOSE: To manufacture a thin-film transistor(TFT) in which high mobility is required and to manufacture a TFT in which a low leakage current is required by a method wherein the active region for the TFT of a matrix part had a catalyst element whose concentration is at a definite value or higher and the concentration of the catalyst element in the TFT for a drive circuit in the periphery is made smaller than a definite value.
CONSTITUTION: When a catalyst material in a very small amount is added to an amorphous silicon film, its crystallization is promoted, its crystallization temperature is lowered and its crystallization time can be shortened. As the catalyst material, a simple substance of Ni, Fe, Co or Pt or a compound of their silicides or the like is suitable. In order to promote the crystallization, it is required to make the concentration of at least one out of them 1×1017cm-3 or higher, preferably 5×1018cm-3 or higher. In addition, in a region in which the catalyst material does not exist, the crystallization is not promoted, and the concentration of the catalyst is made 1×1017cm-3 or lower, preferably 1×1016cm-3 or lower.
Inventors:
Toru Takayama
Hongyong Zhang
Yasuhiko Takemura
Hongyong Zhang
Yasuhiko Takemura
Application Number:
JP6798194A
Publication Date:
July 28, 2003
Filing Date:
March 11, 1994
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1343; G02F1/136; G02F1/1368; H01L21/20; H01L21/265; H01L21/324; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Domestic Patent References:
| JP540278A | ||||
| JP534723A | ||||
| JP6356912A | ||||
| JP2222546A |