PURPOSE: To obtain a semiconductor composite sensor in which each semiconductor region keeps a unique potential by providing a semiconductor region, surrounding more than one piezoresistance, for every piezoresistance and arranging the semiconductor regions not to interfere electrically each other.
CONSTITUTION: An n-type semiconductor region 21 is formed surrounding the outside of p-type semiconductor regions 51 and 41a, 41b. An n-type semiconductor region 22 is formed surrounding the outside of p-type semiconductor regions 52 and 42a, 42b. A p-type semiconductor region 61 is formed while being coupled with p-type semiconductor regions 31, 32 and surrounding the outside of the n-type semiconductor region 21. A p-type semiconductor region 62 is formed while being coupled with p-type semiconductor regions 32, 33 and surrounding the outside of the n-type semiconductor region 22. P-type semiconductor regions 51, 52 have electrode terminals 101, 102 connected in series and when the P-type semiconductor regions 51, 52 have equal resistance, potential at the electrode terminal 103 can be kept at a level equal to one half of the voltage applied to the electrode terminals 101, 102.
JPH08240610 | ACCELERATION DETECTOR AND PRESSURE CONVERTER |
JP3596935 | Semiconductor pressure sensor |
SHIMADA SATOSHI
UKAI SEIICHI
TAKAHASHI YUKIO
SHIMIZU SHUICHI
JPH04249727A | 1992-09-04 | |||
JPS63226956A | 1988-09-21 | |||
JPS61251162A | 1986-11-08 | |||
JPH02304964A | 1990-12-18 | |||
JPH036054A | 1991-01-11 | |||
JPH0423355A | 1992-01-27 | |||
JPH02281752A | 1990-11-19 | |||
JPH06204408A | 1994-07-22 | |||
JPS63266325A | 1988-11-02 | |||
JPS62136064A | 1987-06-19 | |||
JPS60175446A | 1985-09-09 |
WO1988008522A1 | 1988-11-03 |
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