PURPOSE: To obtain a semiconductor composite sensor in which each semiconductor region keeps a unique potential by providing a semiconductor region, surrounding more than one piezoresistance, for every piezoresistance and arranging the semiconductor regions not to interfere electrically each other.
CONSTITUTION: An n-type semiconductor region 21 is formed surrounding the outside of p-type semiconductor regions 51 and 41a, 41b. An n-type semiconductor region 22 is formed surrounding the outside of p-type semiconductor regions 52 and 42a, 42b. A p-type semiconductor region 61 is formed while being coupled with p-type semiconductor regions 31, 32 and surrounding the outside of the n-type semiconductor region 21. A p-type semiconductor region 62 is formed while being coupled with p-type semiconductor regions 32, 33 and surrounding the outside of the n-type semiconductor region 22. P-type semiconductor regions 51, 52 have electrode terminals 101, 102 connected in series and when the P-type semiconductor regions 51, 52 have equal resistance, potential at the electrode terminal 103 can be kept at a level equal to one half of the voltage applied to the electrode terminals 101, 102.
| JPH08240610 | ACCELERATION DETECTOR AND PRESSURE CONVERTER |
| JP3596935 | Semiconductor pressure sensor |
SHIMADA SATOSHI
UKAI SEIICHI
TAKAHASHI YUKIO
SHIMIZU SHUICHI
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