Title:
SEMICONDUCTOR CRYSTAL GROWING DEVICE
Document Type and Number:
Japanese Patent JPS5553414
Kind Code:
A
Abstract:
PURPOSE:To obtain grown film of the desired thickness, by supplying growing plate with gases of different growing compositions separately via separate gas supply pipes. CONSTITUTION:The surface of InP base plate 7 is cleaned by supplying base plate etching gas to base plate 7 from gas supply pipe 13 before the operation of crystal growth. Next, the etching gas is removed by supplying hydrogen gas from gas supply pipe 11. Subsequently, the supply of hydrogen gas is stopped, and pressure- divided In(C2H5), from one of gas supply pipes 12, and pressure-divided PH3, from the other, are sent to base plate 7 for a fixed time. By this, grown film of the desired thickness can be obtained.
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Inventors:
ISHII JIYUN
TAKAHASHI KAZUHISA
TAKAHASHI KAZUHISA
Application Number:
JP12703378A
Publication Date:
April 18, 1980
Filing Date:
October 16, 1978
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B25/14; H01L21/205; H01S5/00; (IPC1-7): C30B25/14; H01L21/205; H01S3/18