PURPOSE: To provide a semiconductor crystal growth method, with which a segregation can be effectively reduced, suitable for formation of a sharp interface.

CONSTITUTION: The title semiconductor crystal growth method is the method with which semiconductor crystal with which the second semiconductor layer 2, having at least partially different composision, will be grown on the first semiconductor layer. This method is composed of a process in which the surface of the first semiconductor layer 1 is coated with an almost uniform hydrogen atom layer 3, and a process in which the raw material of the second semiconductor layer 2 is fed, and the second semiconductor layer 2, consisting at least of one atom layer, is grown on the surface of the first semiconductor layer 1 by the segregation of hydrogen atoms.