To provide a semiconductor crystal wafer and its polishing method, that can reduce the dressing time of polishing cloth being purchased from a polishing cloth maker, at the same time, allows the surface of a compound semiconductor crystal wafer to be subjected to mirror polishing for achieving high-degree planarity, when the dressing treatment polishing cloth is used for polishing the compound semiconductor crystal wafer, and can greatly increase the quality, yield, and productivity of the compound semiconductor crystal wafer.
In the polishing method of a semiconductor crystal wafer, a compound semiconductor crystal wafer obtained by slicing a compound semiconductor crystal ingot is subjected to lapping polishing and is fitted to a mirror- polishing device with upper and lower surface plates where polishing cloth is applied, and polishing liquid is supplied to the polishing cloth part for carrying out mechano-chemical polishing. Also, the polishing method, hydrophilic dressing treatment polishing cloth should be used as the polishing cloth. A compound semiconductor wafer is composed, by using the hydrophilic dressing treatment polishing cloth for carrying out the mirror polishing.
AKIYAMA HIROKI
UEMATSU EI
Next Patent: POLISHING METHOD