Title:
半導体検出器、放射線検出器及び放射線検出装置
Document Type and Number:
Japanese Patent JP7148674
Kind Code:
B2
Abstract:
Provided are a semiconductor detector (1), a radiation detector (2) and a radiation detection apparatus that allow for reduction in size of the radiation detector (2) and enhancement in accuracy of radiation detection by loosening the condition of cooling. A semiconductor detector (1) for detecting radiation comprises a first semiconductor part (11) in which an electron and a hole are generated by incident radiation; a signal output electrode (14) outputting a signal base on the electron or the hole; and a gettering part (13) gettering impurities in the first semiconductor part (11). In addition, the semiconductor detector (1) further comprises a second semiconductor part (12) doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part (11). The second semiconductor part (12) is in contact with the first semiconductor part (11). The gettering part (13) is in contact with the second semiconductor part (12) and not in contact with the first semiconductor part (11).
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Inventors:
Antonino Picciotto
Perluigi Bertti
Maurizio Boscardin
Nicolas Zorzi
Daisuke Matsunaga
Perluigi Bertti
Maurizio Boscardin
Nicolas Zorzi
Daisuke Matsunaga
Application Number:
JP2021082617A
Publication Date:
October 05, 2022
Filing Date:
May 14, 2021
Export Citation:
Assignee:
Fondacione Bruno Kessler
HORIBA, Ltd.
HORIBA, Ltd.
International Classes:
H01L31/08; G01T1/24
Domestic Patent References:
| JP2014092448A |
Foreign References:
| US20050173733 |
Other References:
J. D. Segal et al.,"A new structure for controlling dark current due to surface generation in drift detectors",Nuclear Instruments and Methods in Physics Research A,1998年,Vol.414,pp.307-316
Attorney, Agent or Firm:
Hidehito Kono
Tono Kono
Tono Kono