Title:
SEMICONDUCTOR DEVICE AND AMPLIFIER USING SEMICONDUCTOR THEREOF
Document Type and Number:
Japanese Patent JP3521750
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To change the maximum output of a semiconductor device in the wide range by setting the total gate width of the gate electrode of each field effect transistor(FET) in the different length, and providing the means which supplies the drain voltage for the respective FET unit at the same time.
SOLUTION: A semiconductor device 19 comprises a first FET unit 20 and a second FET unit 21. A first unit source electrode 23 and a drain electrode 24 are set at the gate width Lg1 of a gate electrode 22. A second unit source electrode 31 and a drain electrode 32 are set at the gate width Lg2 of a gate electrode 30. They are set as likewise respectively. The gate width Lg1 is made shorter than Lg2. When the FET unit 20 is operated, the constant drain voltage is supplied to the drain electrode 24 through a first drain pad 29. When the second FET unit 21 is operated, the voltage is applied on the drain electrode 32 via a second drain pad 35.
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Inventors:
Shinkai, Masaki
Application Number:
JP20951798A
Publication Date:
April 19, 2004
Filing Date:
July 24, 1998
Export Citation:
Assignee:
MURATA MFG CO LTD
International Classes:
H01L27/06; H01L21/06; H01L21/338; H01L21/8232; H01L27/095; H01L29/812; H03F3/60; H03F3/68; (IPC1-7): H01L21/338; H01L21/06; H01L21/8232; H01L27/095; H01L29/812; H03F3/68