To provide a compound semiconductor substrate exhibiting broader physical properties that cannot be obtained by only a thermodynamically stable material system using a combination of a metastable material system and the thermodynamically stable high quality-crystal.
The system is provided with a first conductive type clad layer 12, a first conductive type light guide layer 13, an active layer 16 having a light emitting layer 14 consisting of the metastable material system crystal, a second conductive type light guide layer 17, and a second conductive type cladding layer 21 each formed of chemical semiconductor layer are sequentially laminated on a substrate 11, and a bonding layer 18 to which a bonded surface 18a that divides an upper/lower layer formed in a non-light emitting region 20 between an upper surface of the light emitting layer 14 positioned at the uppermost side inside the active layer 16 and a lower surface of the second conductive type cladding layer 17 or between a lower surface of the light emitting layer 14 positioned at the lowermost side inside the active layer 16 and an upper surface of the first conductive type cladding layer 12 is bonded through a quantum dot 19 that does not continue in the inplane direction.
EZAKI ZUISEN
HASHIMOTO REI
| JP2002009004A | 2002-01-11 | |||
| JP2006066422A | 2006-03-09 | |||
| JP2002241192A | 2002-08-28 | |||
| JP2006190710A | 2006-07-20 | |||
| JP2004193371A | 2004-07-08 | |||
| JP2002252423A | 2002-09-06 | |||
| JP2004273661A | 2004-09-30 |
Next Patent: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE