Title:
実質的にドーピングされていない層からなる少なくとも1の群を有する超格子を含む半導体素子
Document Type and Number:
Japanese Patent JP2008543053
Kind Code:
A
Abstract:
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least one group of layers of the superlattice may be substantially undoped.
Inventors:
Marys, Robert, Jay
Cleps, Scott, A
Cleps, Scott, A
Application Number:
JP2008513518A
Publication Date:
November 27, 2008
Filing Date:
May 09, 2006
Export Citation:
Assignee:
Mears Technologies, Inc.
International Classes:
H01L21/8238; H01L29/78; H01L27/092; H01L29/06; H01L29/10; H01L29/15
Domestic Patent References:
| JPS6394680A | 1988-04-25 |
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito