Title:
SEMICONDUCTOR DEVICE FOR DETECTING OPTICAL POSITION
Document Type and Number:
Japanese Patent JP3260495
Kind Code:
B2
Abstract:
PURPOSE: To enable a position detecting semiconductor device to be improved in detection accuracy and easily manufactured by a method wherein all electrodes through which position detection signals are taken out are formed on the surface of a semiconductor substrate.
CONSTITUTION: An optical position detecting semiconductor device is composed of a rectangular P-type diffusion layer 2 formed on the surface of an N-type semiconductor substrate 1, N-type diffusion layers 3 and 4 which are so formed in parallel with the opposed sides of the diffusion layer 2 as to reach to the scmiconductor substrate 1, electrodes 5 and 6 formed along the diffusion layers 3 and 4 and electrically connected to them respectively, and electrodes 7 and 8 formed in parallel with the other opposed sides of the diffusion layer 2 crossing the electrodes 5 and 6 at right angles.
Inventors:
Hiroshi Suzunaga
Yoshimichi Sasaki
Yoshimichi Sasaki
Application Number:
JP18122693A
Publication Date:
February 25, 2002
Filing Date:
July 22, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L31/16; (IPC1-7): H01L31/16
Domestic Patent References:
| JP4256377A | ||||
| JP410581A | ||||
| JP63117203A | ||||
| JP2246168A |
Attorney, Agent or Firm:
Hidekazu Miyoshi (3 outside)
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