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Title:
SEMICONDUCTOR DEVICE, DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC APPLIANCE
Document Type and Number:
Japanese Patent JP2012133381
Kind Code:
A
Abstract:

To provide a semiconductor device capable of preventing current from flowing to a display element during signal writing operation without increasing consumption power and without changing the potential of a power supply line that supplies current to a load for every row.

When a gate-source voltage of a transistor is set by supplying predetermined current to the transistor, the potential of a gate terminal of the transistor is adjusted so as to prevent current from flowing to a load connected to a source terminal of the transistor. Therefore, wiring connected to the gate terminal of the transistor and wiring connected to a drain terminal of the transistor are set to have different potentials. On this occasion, by switching the operation of the transistor, large current is fed to make it difficult to be influenced by cross capacitance generated at the wiring or the like and by wiring resistance, thereby allowing quick setting operation.


Inventors:
KIMURA HAJIME
Application Number:
JP2012022917A
Publication Date:
July 12, 2012
Filing Date:
February 06, 2012
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G09G3/30; G09G3/20; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
JP2004361935A2004-12-24
JP2005049844A2005-02-24
JP2003195810A2003-07-09
JP2003288049A2003-10-10
JP2004191603A2004-07-08
JP2004201297A2004-07-15
JP2005107129A2005-04-21
JP2006258172A2006-09-28
JP2006171109A2006-06-29
JP2007072453A2007-03-22
JP2013140407A2013-07-18
Foreign References:
WO2002075709A12002-09-26
WO2005088726A12005-09-22
WO2004109638A12004-12-16
WO2004061812A12004-07-22
WO2004077671A12004-09-10
Other References:
神谷利夫、野村研二、高木章宏、太田裕道、柳博、平野正浩、細野秀雄: "高移動度（＞１０ｃｍ２／Ｖｓ）を有するアモルファス酸化物半導体ＩｎＧａＺｎＯ４の室温製膜とキャリア輸", 第６５回応用物理学会学術講演会講演予稿集, vol. 第２分冊, JPN6011051800, 1 September 2004 (2004-09-01), pages 791, ISSN: 0002591407
KENJI NOMURA ET AL.: "“Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide s", NATURE, vol. 432, JPN6013036668, 25 November 2004 (2004-11-25), pages 488 - 492, ISSN: 0002591408



 
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