Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE, DISPLAY DEVICE, DISPLAY MODULE AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2013146066
Kind Code:
A
Abstract:

To provide a circuit which inhibits shift of a threshold voltage of a gate electrode of a transistor which is easy to deteriorate and shift of a threshold voltage of a turned-on transistor, and provide a driving method of the circuit in a display device having a circuit which includes transistors, especially, a display device which uses as a display medium an electro-optical element such as a liquid crystal or a light-emitting element.

In a semiconductor device, shift of a threshold voltage of a transistor which is easy to deteriorate and shift of a threshold voltage of a turned-on transistor are inhibited by inputting a signal to a gate electrode of the transistor which is easy to deteriorate through the turned-on transistor. The semiconductor device includes a constitution in which AC pulses are applied to the gate electrode of the transistor which is easy to deteriorate through a transistor with a gate electrode to which high potential (VDD) is applied (or through an element having a resistant component).


Inventors:
UMEZAKI ATSUSHI
Application Number:
JP2013006365A
Publication Date:
July 25, 2013
Filing Date:
January 17, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H03K3/356; G09G3/20; G09G3/30; G09G3/34; G09G3/36; G11C19/00; G11C19/28; H03K23/44
Domestic Patent References:
JP2004103226A2004-04-02
JP2002055644A2002-02-20
JP5312621B22013-10-09
JP2004246358A2004-09-02
JP2004295126A2004-10-21
JP2004226429A2004-08-12



 
Previous Patent: JP2013146065

Next Patent: INFORMATION APPLIANCE