To provide a circuit which inhibits shift of a threshold voltage of a gate electrode of a transistor which is easy to deteriorate and shift of a threshold voltage of a turned-on transistor, and provide a driving method of the circuit in a display device having a circuit which includes transistors, especially, a display device which uses as a display medium an electro-optical element such as a liquid crystal or a light-emitting element.
In a semiconductor device, shift of a threshold voltage of a transistor which is easy to deteriorate and shift of a threshold voltage of a turned-on transistor are inhibited by inputting a signal to a gate electrode of the transistor which is easy to deteriorate through the turned-on transistor. The semiconductor device includes a constitution in which AC pulses are applied to the gate electrode of the transistor which is easy to deteriorate through a transistor with a gate electrode to which high potential (VDD) is applied (or through an element having a resistant component).
JP2004103226A | 2004-04-02 | |||
JP2002055644A | 2002-02-20 | |||
JP5312621B2 | 2013-10-09 | |||
JP2004246358A | 2004-09-02 | |||
JP2004295126A | 2004-10-21 | |||
JP2004226429A | 2004-08-12 |