Title:
半導体素子の駆動能力切替回路及び半導体素子の駆動装置
Document Type and Number:
Japanese Patent JP7218836
Kind Code:
B2
Abstract:
An object of the present invention is to provide a drive capability switching circuit for a semiconductor element and a drive device for a semiconductor element capable of suppressing a radiation noise while reducing a loss occurred in switching of the semiconductor element. An IGBT drive capability switching circuit includes a gate voltage detection unit that detects a voltage level of a gate voltage based on a gate signal which is input to an IGBT in a mirror period, and a gate signal switching unit that switches a voltage level of the gate signal based on the voltage level detected by the gate voltage detection unit.
Inventors:
Takeshi Terashima
Application Number:
JP2022501656A
Publication Date:
February 07, 2023
Filing Date:
December 21, 2020
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H02M1/08; H03K17/16
Domestic Patent References:
| JP2003284318A | ||||
| JP2017070051A | ||||
| JP2009011049A |
Attorney, Agent or Firm:
Hirose Hajime
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