To provide a semiconductor device capable of simplifying circuit configuration.
A Peltier element 51 is arranged, in such a way that an electrically conductive plate 112A that forms the heat absorbing part thereof sticks to an insulating layer 110 and an electrically conductive plate 112B that forms the heat dissipation part thereof sticks to an insulating layer 114. The Peltier element 51 is electrically connected, in such a way that one end thereof is connected to a branch line BL that is branched from a power line PL, and the other end thereof is connected to an electrode plate 108. The Peltier element 51 receives a part of the electric power that has flowed to a power transistor Q1 from the branch line BL and outputs to the electrode plate 108. Namely, the Peltier element 51 absorbs the heat generated by the power transistor Q1 and dissipates the heat to a heat dissipating plate 116 side, by using a part of the electric power flowed to the power transistor Q1.
OSADA YUJI
YOKOI YUTAKA
JPH11214598A | 1999-08-06 | |||
JP2002289752A | 2002-10-04 | |||
JP2000340723A | 2000-12-08 |
Toshio Morita
Tadashi Muto
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