Title:
SEMICONDUCTOR DEVICE FOR EVALUATING DETERIORATION OF DEVICE
Document Type and Number:
Japanese Patent JPH085706
Kind Code:
A
Abstract:
PURPOSE: To enable a semiconductor device for evaluating deterioration of device to inexpensively and easily measure and evaluate the characteristic deterioration of an N-type MOSFET without requiring any large-scale device, such as the pulse generator, etc., on the outside of the semiconductor device as an AC generating source.
CONSTITUTION: Since an N-type MOSFET 30 and ring oscillator 11 are formed in a semiconductor device 10 and the output side of the oscillator 11 is connected to the gate electrode 30c of the MOSFET 30, an alternating current generated from the oscillator 11 is impressed upon the MOSFET 30 as an AC stress when a DC voltage is applied across the oscillator 11 from a DC power source/measuring instrument 20.
Inventors:
HIROTA YOSHIHIRO
Application Number:
JP13559994A
Publication Date:
January 12, 1996
Filing Date:
June 17, 1994
Export Citation:
Assignee:
SUMITOMO METAL IND
International Classes:
H01L21/66; H01L29/78; G01R31/28; (IPC1-7): G01R31/28; H01L21/66; H01L29/78
Attorney, Agent or Firm:
Ryuji Inouchi
Next Patent: SEMICONDUCTOR DEVICE TESTING DEVICE