Title:
SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3410411
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance read out resolution while reducing the cost of a contact type, perfect contact type image sensor by forming a thin insulating film at least partially between a second electrode and a thin film semiconductor layer or between the thin film semiconductor layer and a first electrode constituting a photoelectric conversion part.
SOLUTION: An insulating thin film 5 is formed between a second metal electrode 7 and a thin film semiconductor 4 and the thin film 5 also exists between the sensor pits in a photoelectric conversion element region. Furthermore, the pattern end part of the semiconductor thin film existing between sensor pits is coated with the insulating thin film 5 and since an electrode material is not left in the vicinity of the step of the pattern, leak current between sensor pits is reduced significantly. At the same time, leak current between first and second electrodes 3, 7 is also decreased. Read out resolution of an image sensor can be enhanced by reducing the leak current flowing between adjacent electrodes 6, 7 through a semiconductor layer.
Inventors:
Mitsufumi Kodama
Ichiro Takayama
Ichiro Takayama
Application Number:
JP36869199A
Publication Date:
May 26, 2003
Filing Date:
March 18, 1991
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H04N1/028; H01L21/312; H01L21/336; H01L27/146; H01L29/786; H01L31/10; (IPC1-7): H01L27/146; H01L21/336; H01L29/786; H01L31/10
Domestic Patent References:
| JP2000200897A | ||||
| JP60136259A | ||||
| JP2298071A | ||||
| JP1183845A |
Attorney, Agent or Firm:
Kenzo Fukuda (2 outside)
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