Title:
SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3688726
Kind Code:
B2
Abstract:
PURPOSE: To deposit SiO2 having low dielectric constant and low hygroscopic degree through application of a plasma CVD using an organic silane gas containing fluorine as a constitutive element.
CONSTITUTION: An Si substrate 21 is set in the chamber of a parallel plate plasma CVD system and heated and then TEOS, O2 and NF. gases are introduced simultaneously as a source gas at predetermined flow rates and pressures. RF power is then applied to the electrodes to cause discharge thus depositing SiO2 by 500nm on the Si substrate 21. Subsequently, an Al film is deposited by 400nm by DC magnetron sputtering and patterned to form a first layer Al wiring 23. Similarly, SiO2 is deposited by 800nm and a second layer Al wiring 25 is formed followed by deposition of SiO2 26 by 800nm. When the films are deposited within a range where various conditions are satisfied, SiO2 added with F having low dielectric constant and low hygroscopic degree can be deposited regardless of the kind of source gas.
Inventors:
Yukio Nishiyama
Renpei Nakata
Nobuo Hayasaka
Haruo Okano
Riichiro Aoki
Takato Nagamatsu
Akemi Sato
Toyosaki Masao
Hitoshi Ito
Renpei Nakata
Nobuo Hayasaka
Haruo Okano
Riichiro Aoki
Takato Nagamatsu
Akemi Sato
Toyosaki Masao
Hitoshi Ito
Application Number:
JP16483193A
Publication Date:
August 31, 2005
Filing Date:
July 02, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23C16/40; H01L21/31; H01L21/311; H01L21/316; H01L21/768; H01L23/532; (IPC1-7): H01L21/768; C23C16/40; H01L21/31; H01L21/316
Domestic Patent References:
| JP4360533A | ||||
| JP4268730A | ||||
| JP2077127A | ||||
| JP4092423A | ||||
| JP1283873A | ||||
| JP2135736A | ||||
| JP2218130A | ||||
| JP63237456A | ||||
| JP63220527A | ||||
| JP60027123A |
Attorney, Agent or Firm:
Takehiko Suzue