To provide a semiconductor device having a TEG which can detect stably short circuit between storage nodes when the form of the storage node in a memory cell becomes cylindrical.

In a TEG region, a conducting layer 10 for the storage node is electrically connected with an aluminum wiring layer 15 via an impurity region 2a positioned in the lower layer of the conducting layer (10). As a result, a test signal for checking the short circuit is applied to the conducting layer 10 from the wiring layer 15 via a leading-out wiring layer 12, the impurity region 2a, etc.