PURPOSE: To improve the arbitrariness of the debugging of LSIs, etc., and of failure analysis by abbitrarily connecting between an impurity conductor circuit and wiring to alter a semiconductor circuit with the impurity calculation circuit.
CONSTITUTION: On the surface of a semiconductor device(LSI) 50 which has substantially been complete, i.e., an insulating film 8 of a wiring layer 52, a non-conductor film is formed in the intrinsic state of Si and the like using film formation means available in the manufacturing process of LSIs for example, into which film a P type impurity is doped following a desired pattern configuration to form a P type conductor 1. Further, an N type impurity is doped following a desired pattern configuration to form an N type conductor 2. Thereafter, a P or N type impurity is selectively doped into an intrinsic region 3 at a proper location in an impurity conductor circuit 60 constructed after said film is annealed, and is further annealed to enable semiconductor circuits 42, 43 to be altered. Hereby, a debugging process can be simplified to satisfactorily deal with complicated debugging.
HARAICHI SATOSHI
AZUMA JUNZO
ITO FUMIKAZU
TAKAHASHI TAKAHIKO
OKAMOTO EMIKO
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