SEMICONDUCTOR DEVICE HAVING STORAGE NODE AND METHOD OF MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE HAVING STORAGE NODE AND METHOD OF MANUFACTURING SAME

Document Type and Number:

Japanese Patent JP2005150751

Kind Code:

A

Abstract:

To provide a semiconductor device having at least one storage node, and further provide a method of manufacturing the same.

In the semiconductor device and the method of manufacturing the same, an upper portion of a semiconductor substrate is covered with a molding film. At least one storage contact hole passing through the molding film is arranged. A storage node and a sacrifice film pattern for embedding the storage contact hole is formed. However, the storage node is surrounded by the molding film and the sacrifice film pattern, and the upper surface of the node is exposed. A semiconductor substrate having the sacrifice film pattern and the molding film is covered with a photoresistor film. The photoresistor film has a storage opening corresponding to the storage node. The storage opening serves to expose the storage node. A process for etching the storage node via the storage opening using the photoresistor film as an etching mask is implemented. The etching process partially removes the storage node.

Inventors:

YU SUK-WON
OH KYUNG-SEOK
PARK CHUSEI
SHIN JUNG-HYUN

Application Number:

JP2004332408A

Publication Date:

June 09, 2005

Filing Date:

November 16, 2004

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/8242; H01L21/02; H01L21/822; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108

Attorney, Agent or Firm:

Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro

Previous Patent: VELOCITY FIELD CONVERSION DEVICE USED IN NOZZLE

Next Patent: METHOD OF FORMING NICKEL SILICIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SAME