To provide a semiconductor device including a double gate electrode structure, that can increase the on current while minimizing the generation of leakage current, and provide a manufacturing method for the semiconductor device.
A semiconductor device includes: a gate electrode disposed on a substrate; a first impurity implantation region and a second impurity implantation region disposed on the substrate so that each is disposed adjacent to each end of the gate electrode; and a channel region disposed between the first impurity implantation region and the second impurity implantation region. The gate electrode includes a first sub-gate electrode adjacent to the first impurity implantation region and a second sub-gate electrode adjacent to the second impurity implantation region. The first sub-gate electrode and the second sub-gate electrode are disposed on the channel region. In this semiconductor device, one channel region is independently controlled by the two sub-gates, so that the generation of leakage current can be minimized.
OH YONG-CHUL
WOO DONG-SOO
CHUNG HYUN WOO
JIN GYO-YOUNG
CHOI SEONG-KWAN
HONG HYEONG-SUN
HWANG YOO-SANG
