Title:
SEMICONDUCTOR DEVICE AND INFRARED RAY DETECTION ELEMENT
Document Type and Number:
Japanese Patent JP3440583
Kind Code:
B2
Abstract:
PURPOSE: To reduce a thin film resistance element forming process.
CONSTITUTION: A thin film thermistor 24 of a structure where a lamination resistor 25 is sandwitched by the low resistivity layers 25b, 25c, in which a first resistance layer 25a is composed of a material having lower resistivity than a material of the first resistance layer 25a, from up-and down, and a thin film thermistor 61 of a structure lower electrodes 33, 34 are connected to a low resistivity layer 32b which is the lowermost layer of a lamination resistor 32 having the same layer structure with the lamination resistor 25, are formed. Thereby, the resistor parts (a lamination resistor 25 and a lamination resistor 32) of the thin film thermistor 24 and the thin film thermistor 31 can be simultaneously formed.
Inventors:
Takuro Nakamura
Yoshiaki Tomonari
Yoshiaki Tomonari
Application Number:
JP28829794A
Publication Date:
August 25, 2003
Filing Date:
November 22, 1994
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
International Classes:
G01K7/22; G01J1/02; G01J5/20; H01C1/142; H01C7/04; H01L37/00; (IPC1-7): H01L37/00; G01J1/02; G01J5/20; G01K7/22; H01C1/142; H01C7/04
Attorney, Agent or Firm:
Junji Ando