Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP3497853
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device where the operating speed is high and at the same time power consumption is small even if an SOI element is used, and to provide a semiconductor integrated circuit.
SOLUTION: The semiconductor device is equipped with a semiconductor layer that is provided on a semiconductor substrate via an insulation film. On the semiconductor layer, a gate electrode is provided via a gate insulation film, and a pair of source/drain regions is formed in the semiconductor layer so that a body region under the gate electrode is sandwiched. A control section supplies voltage between the source/drain regions. The control section supplies a first voltage and a second voltage that differs from the first one between the source/drain regions while the semiconductor device is off and on, and the second voltage is set so that potential in a body region in an off state becomes substantially the same as that in the body region in an on state.
Inventors:
Shigeru Kawanaka
Application Number:
JP2002167156A
Publication Date:
February 16, 2004
Filing Date:
June 07, 2002
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/04; H01L21/822; H01L29/786; (IPC1-7): H01L29/786; H01L21/822; H01L27/04
Domestic Patent References:
| JP9321259A | ||||
| JP2000174134A | ||||
| JP2000332132A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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