To obtain a semiconductor device capable of increasing capacity of a capacitor.
There is provided the semiconductor device equipped with a first interlayer insulating film 3 formed on a semiconductor substrate 1, a lower electrode contact plug 5 formed by penetrating the first interlayer insulating film 3, a second interlayer insulating film 6 formed on the first interlayer insulating film 3, and a capacitor section 43 comprising a lower electrode formed in an opening 41 penetrating the second interlayer insulating film 6 to reach the lower electrode contact plug 5, a dielectric film, and an upper electrode. Further, an auxiliary insulative protrusion 42 is provided in part of an upper portion of the lower electrode contact plug 5, and further the capacitor section 43 is formed along an upper portion of the auxiliary insulative protrusion 42 inside the capacitor opening 41.
SOEDA SHINYA
RENESAS SEMICONDUCTOR ENGINEER
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami