Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2016111060
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can prevent generation of cracks in a lower region of a top metal layer at low cost.SOLUTION: A semiconductor device 1 includes: a fourth interlayer film 11 having a pad region 3 and an element region 4; a MIM capacitor 27 including a lower electrode 28, a capacitor capacitance film 33 and an upper electrode 34 which are sequentially formed on the element region 4; wiring 26 under pads which is formed on the pad region 3 and arranged in the same layer with the lower electrode 28; an embedded pad 30 arranged in the same layer with the upper electrode 34; a fifth interlayer film 12 formed on the fourth interlayer film 11 to cover the embedded pad 30 and the MIM capacitor 27; and an electrode pad 2 which is formed on the fifth interlayer film 12 and pierces the fifth interlayer film 12 to contact the embedded pad 30.SELECTED DRAWING: Figure 3
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Inventors:
HAMADA YOSHIHIRO
SEKIGUCHI YUJI
SEKIGUCHI YUJI
Application Number:
JP2014244373A
Publication Date:
June 20, 2016
Filing Date:
December 02, 2014
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L21/3205; H01L21/60; H01L21/768; H01L21/822; H01L23/522; H01L27/04
Domestic Patent References:
| JP2011253944A | 2011-12-15 | |||
| JP2011086769A | 2011-04-28 | |||
| JP2002270767A | 2002-09-20 | |||
| JP2002110799A | 2002-04-12 | |||
| JPH06204283A | 1994-07-22 | |||
| JP2004235416A | 2004-08-19 |
Foreign References:
| US20130115749A1 | 2013-05-09 |
Attorney, Agent or Firm:
Inaoka cultivation
Mio Kawasaki
Kyoumura Junji
Mio Kawasaki
Kyoumura Junji