Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017224794
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of reducing the size as compared with the prior art.SOLUTION: A silicon layer 20 is provided in a first region R1 on a sapphire substrate 10 and a silicon device 200 is formed in the silicon layer 20. An oxide semiconductor layer 30 is provided in a second region R2 on the sapphire substrate 10, and an oxide semiconductor device 300 is formed in the oxide semiconductor layer 30. The silicon device 200 and the oxide semiconductor device 300 are connected by wiring lines 51, 52 formed in a wiring layer 50.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
FUJIMAKI HIROKAZU
KANEKO KOICHI
KANEKO KOICHI
Application Number:
JP2016121190A
Publication Date:
December 21, 2017
Filing Date:
June 17, 2016
Export Citation:
Assignee:
LAPIS SEMICONDUCTOR CO LTD
International Classes:
H01L29/786; H01L21/28; H01L21/329; H01L21/336; H01L21/338; H01L27/144; H01L29/47; H01L29/812; H01L29/872; H01L31/10
Domestic Patent References:
| JP2015149376A | 2015-08-20 | |||
| JP2009170614A | 2009-07-30 | |||
| JP2012516037A | 2012-07-12 | |||
| JP2011108692A | 2011-06-02 | |||
| JP2000208614A | 2000-07-28 | |||
| JP2004128508A | 2004-04-22 | |||
| JP2006228986A | 2006-08-31 | |||
| JP2005340810A | 2005-12-08 | |||
| JP2016534390A | 2016-11-04 | |||
| JP2016051796A | 2016-04-11 |
Foreign References:
| US20160064465A1 | 2016-03-03 | |||
| US20110180806A1 | 2011-07-28 | |||
| WO2016035696A1 | 2016-03-10 | |||
| US20050045995A1 | 2005-03-03 | |||
| US20060289876A1 | 2006-12-28 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda