Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2948018
Kind Code:
B2
Abstract:
PURPOSE: To improve the degree of freedom in wiring and facilitate the multilayer promotion of wiring by forming patterned wiring layers on the main surface side and the rear side of a semiconductor device.
CONSTITUTION: A device layer 3 is made on the main surface of an SOI substrate by normal process, and then a supporting substrate 11 is stuck to the main surface side, and the substrate 1 on the rear side is removed until the insulator film 2 of the SOI substrate is exposed. Next, a connection hole is made in the insulator film, and wiring layers 16 and 17 are made on the rear. Moreover, also in a stuck WSI, an electrode can be made in the optional place on the WSI wafer by exposing the insulator film from the rear, using an SOI substrate.
Inventors:
ITSUHOSHI TAKASHI
SUGAHARA KAZUYUKI
SUGAHARA KAZUYUKI
Application Number:
JP9208092A
Publication Date:
September 13, 1999
Filing Date:
March 17, 1992
Export Citation:
Assignee:
MITSUBISHI DENKI KK
International Classes:
H01L21/3205; H01L21/02; H01L21/336; H01L21/768; H01L23/52; H01L23/522; H01L27/00; H01L27/12; H01L29/786; (IPC1-7): H01L27/00; H01L21/3205; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| JP2154232A | ||||
| JP344066A | ||||
| JP118248A | ||||
| JP5948950A |
Attorney, Agent or Firm:
Kenichi Hayase