Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3050165
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To effectively reduce breakdown phenomenon of a gate oxide film which is to be caused by hot carrier effect while low resistance is maintained, by covering a silicon oxide film for element isolation, a diffusion layer, a gate oxide film and a gate electrode with a diamond-like carbon layer.
SOLUTION: A silicon oxide film 102 for element isolation, a diffusion layer 106 turning to a source region and a drain region, a gate oxide film 103, a gate electrode 104 and a spacer 105 are formed in specified positions on a silicon substrate 101. A silicide layer 108 is formed on the surfaces of the diffusion layer 106 and the gate electrode 104. The whole surfaces of the above layers are covered with a diamond-like carbon layer 113, and diffusion of water content in the gate oxide film 103 region is prevented. Thereby breakdown phenomenon (hot carrier deterioration) of the gate oxide film 103 which is to be caused by hot carrier effect can be effectively prevented.
Inventors:
Yoshihisa Matsubara
Application Number:
JP14036497A
Publication Date:
June 12, 2000
Filing Date:
May 29, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L29/78; H01L21/314; H01L21/316; H01L23/00; H01L23/31; (IPC1-7): H01L29/78; H01L21/314; H01L21/316
Domestic Patent References:
| JP387047A | ||||
| JP8264648A | ||||
| JP864591A | ||||
| JP5114729A | ||||
| JP883842A | ||||
| JP8236517A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)