Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3242884
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To simultaneously manufacture a thin-film transistor being arranged at a pixel part and a thin-film transistor being arranged at a peripheral circuit part with each characteristic by separately manufacturing the thin-film transistor at the pixel part and the thin-film transistor at the peripheral circuit part with different amount of added nickel.
SOLUTION: An extremely thin oxide film is formed on the surface of exposed an amorphous silicon film, an acetate solution containing, for example, 10 ppm nickel element that is a catalyst element for promoting crystallization is coated, and nickel is introduced to the exposed surface of the amorphous silicon film. In this case, nickel silicide is formed only at the region of a thin- film transistor(TFT) for pixels. Then, the surface of the amorphous silicon film is covered with a silicon oxide film, an acetate solution containing, for example, 100 ppm nickel element is coated, and nickel is introduced to the exposed surface of the amorphous silicon film. Nickel is introduced to the surface of the amorphous silicon film for constituting a TFT for peripheral circuits by a concentration of ten times larger as compared with the amorphous silicon film for constituting the TFT for pixels.
More Like This:
Inventors:
Akiharu Miyanaga
Hisashi Ohtani
Yasuhiko Takemura
Hisashi Ohtani
Yasuhiko Takemura
Application Number:
JP24880498A
Publication Date:
December 25, 2001
Filing Date:
September 02, 1998
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/136; G02F1/1368; G09F9/00; G09F9/33; H01L21/02; H01L21/20; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L29/786; H01L21/336