Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0548130
Kind Code:
A
Abstract:
PURPOSE:To manufacture such a semiconductor device that is free from the deterioration of optical sensitivity caused by misfitting of a grating at the interface of a heterojunction and provided with a high-quality film having no defect by providing a taperlike band profile and making the band coupling continuous at the boundaries between a p-type layer and i-type layer and between the i-type layer and an n-type layer. CONSTITUTION:In this non-single-crystal silicon semiconductor device having a pin type structure, a p-type layer 105, i-type layer 104, and n-type layer 103 are formed so that they can have a taper-like in-film hydrogen-concentration profile and taper-like band profile. In addition, the band coupling is made continuous at the boundaries between the layers 105 and 104 and between the layers 104 and 103. The continuous band coupling can be obtained by forming the layers 105, 104, and 103 while the in-film hydrogen concentration is controlled so that the optical band gaps between each of the layers can be formed under a taper-like condition. Therefore, the occurrence of an band offset which is produced when the layers are deposited in the conventional method can be prevented.
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Inventors:
TASHIRO KAZUAKI
Application Number:
JP22117891A
Publication Date:
February 26, 1993
Filing Date:
August 07, 1991
Export Citation:
Assignee:
CANON KK
International Classes:
H01L21/205; H01L31/04; H01L31/10; (IPC1-7): H01L21/205; H01L31/04; H01L31/10
Attorney, Agent or Firm:
Yamashita
Next Patent: JPS548131