SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH06252091

Kind Code:

A

Abstract:

PURPOSE: To realize good adhesion and electric connection between a silicon substrate or pellet and a metallic electrode formed in a rear thereof.

CONSTITUTION: A metal electrode 32 formed in a rear of a silicon substrate 20 is constituted of a plurality of metallic layers, and the metallic layers are constituted of a nickel silicide layer 33, a titanium layer 34, a nickel layer 35 and a silver layer 36 from the side of the silicon substrate 20. After nickel, titanium, nickel and silver are applied and formed one by one on the silicon substrate 20, they are thermally treated at 350 to 450°C and silicon and nickel are mutually diffused. The nickel silicide layer 33 is formed in this way. Since a nickel silicide layer is provided between the silicon substrate and a metal electrode, electric resistance can be reduced while ensuring good adhesion therebetween. Since thermal treatment is performed at 350 to 450°C, soldering treatment can be performed excellently for an electric circuit formed on a pellet without damaging it.

Inventors:

OKUBO TOSHIO
TSUKAGOSHI NOBUO
ANDO AKIO
KIYOZUKA KOICHI
HAYASHI SHOJI
TANAKA RYUICHI
IIJIMA TETSUO

Application Number:

JP5962893A

Publication Date:

September 09, 1994

Filing Date:

February 24, 1993

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/28; H01L21/52; H01L23/48; H01L29/78; (IPC1-7): H01L21/28; H01L21/52; H01L23/48

Attorney, Agent or Firm:

Kajiwara Tatsuya

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