SEMICONDUCTOR DEVICE AND ITS MANUFACTURE - MITSUBISHI ELECTRIC CORP

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH0661269

Kind Code:

A

Abstract:

PURPOSE: To acquire a semiconductor device wherein a step on a semiconductor substrate is reduced and a device on the semiconductor substrate is completely separated from other regions and a manufacturing method thereof.

CONSTITUTION: A resist pattern is arranged in a specified region on an n-InGaAs layer for ohmic junction on an uppermost layer of a compound semiconductor crystalline layer on an InP substrate 1, the n-InGaAs layer is selectively mesa- etched using the resist pattern as a mask and ion implantation is performed for the compound semiconductor crystalline layer to form an insulating region 13. Source/drain electrodes 9a, 9b are formed on an upper surface of the n- InGaAs layer, a recess 11 is formed while a source electrode 9a-to-drain electrode 9b current is measured, and a fine gate electrode 10b which extends to arm upper surface of the insulation region 13 from a bottom of the recess 11 is formed by adopting lift-off technique.

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Inventors:

TERAZONO SHINICHI

Application Number:

JP23655692A

Publication Date:

March 04, 1994

Filing Date:

August 11, 1992

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L21/335; H01L21/338; H01L21/76; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L29/812; H01L21/76

Attorney, Agent or Firm:

Kenichi Hayase

Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE