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Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2002026178
Kind Code:
A
Abstract:

To suppress leakage and infiltration of electromagnetic waves.

The semiconductor device comprises a wiring board, having first and second major surfaces facing each other; a plurality of first electrodes formed on the first major surface and a plurality of second electrodes formed on the second major surface; a semiconductor chip having a first major surface, on which a plurality of electrodes are formed and a second major surface facing the first major surface, in which the first major surface is placed on the wiring board while facing the first major surface of substrate and the plurality of electrodes of chip are connected electrically with the plurality of electrodes of substrate interposed with connecting means; and a conductive film covering the first major surface of substrate, the second major surface of chip and the side face of the wiring board.


Inventors:
SHIMIZU TOMO
NOSE FUJIAKI
HAYASHI TERUYOSHI
KIKUCHI HIROSHI
NAKAZATO NORIO
Application Number:
JP2000202828A
Publication Date:
January 25, 2002
Filing Date:
July 04, 2000
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H05K9/00; H01L23/12; (IPC1-7): H01L23/12; H05K9/00
Attorney, Agent or Firm:
Akita Aki