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Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005150686
Kind Code:
A
Abstract:

To permit alignment centering on a gate electrode 106 upon and after transfer, in a semiconductor device 20 wherein a single-crystal Si thin film transistor 16a which is formed on a single-crystal Si wafer 100 is transferred onto an insulating substrate 2.

LOCOS oxidization is performed with respect to an element-isolation region on the single-crystal Si wafer 100, and a field oxide film (SiO2 film) 104 is formed, then a marker 107 is formed on the field oxide film 104.


Inventors:
OGAWA YASUYUKI
TAKATO YUTAKA
Application Number:
JP2004212230A
Publication Date:
June 09, 2005
Filing Date:
July 20, 2004
Export Citation:
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Assignee:
SHARP KK
International Classes:
G02F1/1368; H01L21/02; H01L21/336; H01L21/58; H01L21/60; H01L21/68; H01L21/76; H01L21/762; H01L21/77; H01L21/822; H01L21/84; H01L23/544; H01L27/06; H01L27/12; H01L29/423; H01L29/786; (IPC1-7): H01L27/12; G02F1/1368; H01L21/336; H01L21/76; H01L29/786
Domestic Patent References:
JPH1124106A1999-01-29
JP2003031780A2003-01-31
JP2003282885A2003-10-03
JPH0260163A1990-02-28
JPH05275665A1993-10-22
JP2002244587A2002-08-30
JPS63136661A1988-06-08
JPH0541478A1993-02-19
JPH0453230A1992-02-20
JPH043457A1992-01-08
JPH05267563A1993-10-15
JP3278944B22002-04-30
JP2743391B21998-04-22
JP3141486B22001-03-05
Attorney, Agent or Firm:
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko



 
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